Title:
POLISHING LIQUID AND CHEMICAL MECHANICAL POLISHING METHOD
Document Type and Number:
WIPO Patent Application WO/2019/181399
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a polishing liquid which, when applied to CMP, yields a similar silicon oxide polishing speed and silicon nitride polishing speed and which does not tend to cause defects in the polished surface; and to provide a chemical mechanical polishing method.
This polishing liquid is used in chemical mechanical polishing and contains colloidal silica and a buffering agent excluding phosphoric acid. Defining X as the pH of the polishing liquid, the buffering agent is a compound with pKa in the range of X±1. The zeta potential of the colloidal silica measured in a state in the polishing liquid is less than or equal to -20 mV, the electrical conductivity is greater than or equal to 200 μS/cm, and the pH is 2 to 6.
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Inventors:
KAMIMURA TETSUYA (JP)
Application Number:
PCT/JP2019/007514
Publication Date:
September 26, 2019
Filing Date:
February 27, 2019
Export Citation:
Assignee:
FUJIFILM CORP (JP)
International Classes:
H01L21/304; B24B37/00; C09G1/02; C09K3/14
Domestic Patent References:
| WO2008117592A1 | 2008-10-02 | |||
| WO2011093153A1 | 2011-08-04 |
Foreign References:
| JP2011216581A | 2011-10-27 | |||
| JP2016056292A | 2016-04-21 | |||
| JP2016069465A | 2016-05-09 | |||
| JP2010541204A | 2010-12-24 | |||
| JP2015201644A | 2015-11-12 |
Attorney, Agent or Firm:
NAKASHIMA Junko et al. (JP)
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