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Title:
POLISHING LIQUID, POLISHING METHOD, COMPONENT MANUFACTURING METHOD, AND SEMICONDUCTOR COMPONENT MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2024/089850
Kind Code:
A1
Abstract:
This polishing liquid contains abrasive grains containing cerium oxide, at least one type of aromatic carboxylic acid compound selected from the group consisting of aromatic carboxylic acids and salts thereof, and halide ions. This polishing method is for polishing a polishing target member by using the polishing liquid. This component manufacturing method is for obtaining a component by using the polishing target member polished by the polishing method. This semiconductor component manufacturing method is for obtaining a semiconductor component by using the polishing target member polished by the polishing method.

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Inventors:
ONUMA TAIRA (JP)
HIRAO KOHEI (JP)
KURATA YASUSHI (JP)
Application Number:
PCT/JP2022/040219
Publication Date:
May 02, 2024
Filing Date:
October 27, 2022
Export Citation:
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Assignee:
RESONAC CORP (JP)
International Classes:
H01L21/304
Domestic Patent References:
WO2021162111A12021-08-19
Foreign References:
JP2011171446A2011-09-01
US20210115297A12021-04-22
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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