POLYCRYSTALLINE DIELECTRIC THIN FILM AND CAPACITOR ELEMENT

Title:

POLYCRYSTALLINE DIELECTRIC THIN FILM AND CAPACITOR ELEMENT

Document Type and Number:

WIPO Patent Application WO/2017/135294

Kind Code:

A1

Abstract:

[Problem] To provide a polycrystalline dielectric thin film and capacitor element having a small dielectric loss tanδ. [Solution] A polycrystalline dielectric thin film, in which the main composition is a perovskite oxynitride. The perovskite oxynitride is expressed by the compositional formula AaBbOoNn (a+b+o+n = 5), where a/b > 1 and n ≥ 0.7.

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Inventors:

YAMAZAKI KUMIKO (JP)
CHIHARA HIROSHI (JP)
NAGAMINE YUKI (JP)
YAMAZAKI JUNICHI (JP)

Application Number:

PCT/JP2017/003577

Publication Date:

August 10, 2017

Filing Date:

February 01, 2017

Export Citation:

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Assignee:

TDK CORP (JP)

International Classes:

H01G4/33; C04B35/50; H01B3/00; H01G4/12

Domestic Patent References:

WO2015025753A1

2015-02-26

Foreign References:

JPS61122108A	1986-06-10
JP2013001625A	2013-01-07

Other References:

I.MAROZAU ET AL.: "Pulsed laser deposition and characterisation of perovskite-type LaTio3-xNx thin films", ACTA MATERIALIA, vol. 59, 2011, pages 7145 - 7154, XP028310061
SCIENTIFIC REPORTS 4
KAST ANNUAL RESEARCH REPORT, 2013, pages 32 - 33
See also references of EP 3392889A4

Attorney, Agent or Firm:

MAEDA & SUZUKI (JP)

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