POLYCRYSTALLINE SILICON AND PROCESS AND APPARATUS FOR PRODUCING THE SAME

Title:

POLYCRYSTALLINE SILICON AND PROCESS AND APPARATUS FOR PRODUCING THE SAME

Document Type and Number:

WIPO Patent Application WO/2001/085613

Kind Code:

A1

Abstract:

A polycrystalline silicon which has bubbles therein and has an apparent density of 2.20 g/cm?3¿ or lower. In crushing, the amount of fine particles generated is extremely small and the silicon can be easily pulverized. This silicon is produced by keeping silicon molten in the presence of hydrogen, naturally dropping droplets of the resultant hydrogen-containing silicon over 0.2 to 3 seconds, and cooling the falling droplets to such a degree that hydrogen bubbles are confined therein. This silicon is produced in an apparatus which comprises a cylindrical vessel where silicon is precipitated and melted and a chlorosilane feed pipe inserted into the cylindrical vessel so as to extend to the silicon melting zone in the vessel, and which has a structure for supplying a sealing gas to the space between the cylindrical vessel and the chlorosilane feed pipe.

Inventors:

WAKAMATSU SATORU (JP)
ODA HIROYUKI (JP)

Application Number:

PCT/JP2001/003865

Publication Date:

November 15, 2001

Filing Date:

May 09, 2001

Export Citation:

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Assignee:

TOKUYAMA CORP (JP)
WAKAMATSU SATORU (JP)
ODA HIROYUKI (JP)

International Classes:

B01J10/00; C01B33/03; (IPC1-7): C01B33/02

Foreign References:

JPH11314996A	1999-11-16
JPH10273310A	1998-10-13
JPH1033969A	1998-02-10

Other References: