Title:
POLYMER FOR COATING PHOTORESIST PATTERN, AND METHOD FOR FORMING PATTERN FOR SEMICONDUCTOR DEVICE USING SAME
Document Type and Number:
WIPO Patent Application WO/2010/098618
Kind Code:
A3
Abstract:
Disclosed are a polymer for coating a photoresist pattern, which can improve the resolution of a lithography process, and a method for forming a pattern of a semiconductor device using the polymer. The polymer for coating a photoresist pattern can be expressed by the chemical formula of claim 1. In chemical formula 1, R* is independently a hydrogen atom or a methyl group (-CH3), R1 is a linear or cyclic hydrocarbon group with 3 to 6 carbon atoms and 1 to 2 nitrogen atoms, R2 is an alkoxy benzene group or an alkoxy carbonyl group with 5 to 20 carbon atoms, and x, y and z are each a mol % of each repeating unit based on the entirety of the polymer of said chemical formula, where x is 5 to 90 mol %, y is 5 to 60 mol %, and z is 5 to 30 mol %.
Inventors:
LEE JUNG-YOUL (KR)
LEE JAE-WOO (KR)
KIM DEOG-BAE (KR)
KIM JAE-HYUN (KR)
LEE JAE-WOO (KR)
KIM DEOG-BAE (KR)
KIM JAE-HYUN (KR)
Application Number:
PCT/KR2010/001227
Publication Date:
December 02, 2010
Filing Date:
February 26, 2010
Export Citation:
Assignee:
DONGJIN SEMICHEM CO LTD (KR)
LEE JUNG-YOUL (KR)
LEE JAE-WOO (KR)
KIM DEOG-BAE (KR)
KIM JAE-HYUN (KR)
LEE JUNG-YOUL (KR)
LEE JAE-WOO (KR)
KIM DEOG-BAE (KR)
KIM JAE-HYUN (KR)
International Classes:
G03F7/004
Foreign References:
| US20040202838A1 | 2004-10-14 | |||
| US20030059709A1 | 2003-03-27 | |||
| JP2006189760A | 2006-07-20 | |||
| US20060100306A1 | 2006-05-11 |
Attorney, Agent or Firm:
LEE, Sang-Hun (Yeong-Won Bldg. Suite 503739-5, Yeoksam-Dong, Gangnam-Gu, Seoul 135-924, KR)
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