POLYMER, RESIST COMPOSITION CONTAINING SAID POLYMER, METHOD FOR MANUFACTURING MEMBER USING SAME, AND PATTERN FORMATION METHOD

WIPO Patent Application WO/2024/062998

A1

Provided are: a polymer which mitigates sensitivity decrease caused by a decrease in energy application density in patterning performed by irradiation with strong particle beams or electromagnetic waves of particles and photon energy and which is used in a resist composition having excellent development contrast characteristics and etching resistance; a resist composition containing said polymer; a method for manufacturing a member using said resist composition; and a pattern formation method.　The polymer includes: a unit A which has an onium salt structure and generates acid by irradiation with particle beams or electromagnetic waves; and an organometallic compound-containing unit B having a metal atom selected from the group consisting of Sn, Sb, Ge, Bi, and Te, wherein the unit A is a polymer represented by formula (1). (In general formula (1), R1 is one selected from the group consisting of a hydrogen atom, a linear, branched, or cyclic C1–C6 alkyl group, and a linear, branched, or cyclic C2–C6 alkenyl group, and at least one hydrogen atom in the alkyl group and alkenyl group in R1 may be substituted with a substituent; L is one selected from the group consisting of a direct bond, a carbonyl oxy group, a carbonyl amino group, a phenylene diyl group, a naphthalene diyl group, a phenylene diyl oxy group, a naphthalene diyl oxy group, a phenylene diyl carbonyl oxy group, a naphthalene diyl carbonyl oxy group, a phenylene diyl oxy carbonyl group, and a naphthalene diyl oxy carbonyl group; Sp is one among a direct bond, a linear, branched, or cyclic C1–C6 alkylene group which may have a substituent, and a linear, branched, or cyclic C2–C6 alkenylene group which may have a substituent, and at least one methylene group in Sp may be substituted with a divalent heteroatom-containing group; M+ is a sulfonium cation group or an iodonium cation group; X- is a monovalent anion group; f is an integer of 2-4, and f X- bonded to R, f M+ corresponding to X-, f R1, f L, and f Sp may be respectively the same as or different from each other; and R is a C1-C6 f-valent hydrocarbon group which may have a substituent, at least one hydrogen atom in R may be substituted with a substituent, and at least one methylene group in R may be substituted with a divalent heteroatom-containing group.)

ENOMOTO SATOSHI (JP)
MACHIDA KOHEI (JP)
KOZAWA TAKAHIRO (JP)

PCT/JP2023/033450

March 28, 2024

September 13, 2023

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TOYO GOSEI CO LTD (JP)
UNIV OSAKA (JP)

C08F220/38; C08F8/00; C08F212/14; G03F7/004; G03F7/20; G03F7/32

JP2020176096A	2020-10-29
JP2020101593A	2020-07-02
JP2019182813A	2019-10-24
JP2017207532A	2017-11-24

ENOMOTO SATOSHI, YOSHINO TAKUMI, MACHIDA KOHEI, KOZAWA TAKAHIRO: "Incorporation of chemical amplification in dual insolubilization resists", JAPANESE JOURNAL OF APPLIED PHYSICS, JAPAN SOCIETY OF APPLIED PHYSICS, JP, vol. 58, no. 5, 1 May 2019 (2019-05-01), JP , pages 056504, XP093150991, ISSN: 0021-4922, DOI: 10.7567/1347-4065/ab0645
ENOMOTO SATOSHI, YOSHINO TAKUMI, MACHIDA KOHEI, KOZAWA TAKAHIRO: "Effects of an organotin compound on radiation-induced reactions of extreme-ultraviolet resists utilizing polarity change and radical crosslinking", JAPANESE JOURNAL OF APPLIED PHYSICS, JAPAN SOCIETY OF APPLIED PHYSICS, JP, vol. 58, no. 1, 1 January 2019 (2019-01-01), JP , pages 016504, XP093150993, ISSN: 0021-4922, DOI: 10.7567/1347-4065/aae986

KURIHARA, Hiroyuki et al. (JP)

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