Title:
PORE DEPOSITION PROCESS ON SUBSTRATE AND SEMICONDUCTOR PROCESSING DEVICE
Document Type and Number:
WIPO Patent Application WO/2015/158152
Kind Code:
A1
Abstract:
The present invention provides a pore deposition process on a substrate and a semiconductor processing device. In the pore deposition process on the substrate, a metal particle migration process is performed at least once. The metal particle migration process comprises the following steps: step S100, forming a metal layer in a pore on the substrate by sputtering deposition; and step S200, heating the substrate with the metal layer formed thereon to a preset temperature so that metal particles in the metal layer gradually migrate from the top of the pore to the bottom of the pore. The pore deposition process on the substrate and the semiconductor processing device provided in the present invention not only can improve the coverage rate of metal particles on the side wall in the pore so as to provide favorable conditions for a subsequent pore filling process, but also have no special requirements on the size of the pore and thus have a wide application range.
Inventors:
BIAN GUODONG (CN)
Application Number:
PCT/CN2014/094380
Publication Date:
October 22, 2015
Filing Date:
December 19, 2014
Export Citation:
Assignee:
BEIJING NMC CO LTD (CN)
International Classes:
C23C14/34; H01L21/203; H01L21/285; H01L21/443
Foreign References:
| JPH1098041A | 1998-04-14 | |||
| CN1697137A | 2005-11-16 | |||
| JP2002075895A | 2002-03-15 | |||
| EP0600423A1 | 1994-06-08 | |||
| TW200406851A | 2004-05-01 | |||
| CN101552184A | 2009-10-07 |
Attorney, Agent or Firm:
TEE&HOWE INTELLECTUAL PROPERTY ATTORNEYS (CN)
北京天昊联合知识产权代理有限公司 (CN)
北京天昊联合知识产权代理有限公司 (CN)
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