POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN

Title:

POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN

Document Type and Number:

WIPO Patent Application WO/2003/048863

Kind Code:

A1

Abstract:

A positive resist composition which is obtained by dissolving (A) a resin ingredient which has units derived from a (meth)acrylic ester in the main chain and comes to have enhanced solubility in alkalis by the action of an acid and (B) an acid generator ingredient which generates an acid upon exposure to light in (C) an organic solvent, wherein the resin ingredient (A) is a copolymer comprising (a1) a unit derived from a (meth)acrylic ester containing an acid−dissociating dissolution−inhibitive group containing a polycyclic group, (a2) a unit derived from a (meth)acrylic ester containing a lactone−containing monocyclic or polycyclic group, (a3) a unit derived from a (meth)acrylic ester containing a hydroxy−containing polycyclic group, and (a4) a unit which is derived from a (meth)acrylic ester containing a polycyclic group and is other than the units (a1), (a2), and (a3). This chemical amplification type positive resist composition has excellent resolution and is effective in improving the focal depth range for an isolated resist pattern and in inhibiting the proximity effect.

Inventors:

HADA HIDEO (JP)
FUJIMURA SATOSHI (JP)
IWASHITA JUN (JP)

Application Number:

PCT/JP2002/012538

Publication Date:

June 12, 2003

Filing Date:

November 29, 2002

Export Citation:

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Assignee:

TOKYO OHKA KOGYO CO LTD (JP)
HADA HIDEO (JP)
FUJIMURA SATOSHI (JP)
IWASHITA JUN (JP)

International Classes:

C08F220/18; C08F220/28; G03F7/039; H01L21/027; (IPC1-7): G03F7/039; H01L21/027

Foreign References:

JP2000338674A

2000-12-08

Other References: