Title:
POWER DEVICE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2022/061768
Kind Code:
A1
Abstract:
Disclosed in the embodiments of the present invention are a power device and a manufacturing method therefor. The method comprises: epitaxy; the deposition of silicon nitride; the deposition of silica; the deposition of silicon nitride; etching source region mask injection; ion implantation in the source region; corrosion to expose a channel and a base region; ion implantation in a well region; wafer cleaning; ion implantation in the base region; carbon film processing and annealing; and developing subsequent processing to complete the manufacturing of a power device. The described power device is manufactured by means of the described method. The embodiments of the present invention can greatly reduce system costs, while preventing a high reverse recovery current in a body diode as well as preventing bipolar attenuation.
Inventors:
WEN ZHENGXIN (CN)
ZHANG ZHENZHONG (CN)
HE WEIWEI (CN)
WANG ZHIHAN (CN)
ZHENG ZEDONG (CN)
ZHANG ZHENZHONG (CN)
HE WEIWEI (CN)
WANG ZHIHAN (CN)
ZHENG ZEDONG (CN)
Application Number:
PCT/CN2020/117901
Publication Date:
March 31, 2022
Filing Date:
September 25, 2020
Export Citation:
Assignee:
SHENZHEN BASIC SEMICONDUCTOR LTD (CN)
International Classes:
H01L21/28; H01L21/336; H01L29/45; H01L29/78
Domestic Patent References:
| WO2020114666A1 | 2020-06-11 |
Foreign References:
| CN105810722A | 2016-07-27 | |||
| CN110337725A | 2019-10-15 | |||
| CN110518070A | 2019-11-29 |
Attorney, Agent or Firm:
CHINA TRUER IP (CN)
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