Title:
POWER MODULE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2013/089242
Kind Code:
A1
Abstract:
[Aim] Provided is a power module semiconductor device for reducing the size of a transfer molding. [Solution] The present invention comprises: low pressure side gate terminal electrodes (GL4, GL5, and GL6) disposed at a first side of a substrate (10); low pressure side source terminal electrodes (SL4, SL5, and SL6) disposed adjacent to the low pressure side gate terminal electrodes; high pressure side gate terminal electrodes (GL1, GL2, and GL3) disposed at the first side away from the low pressure side gate terminal electrodes and the low pressure side source terminal electrodes; high pressure side source terminal electrodes (SL1, SL2, and SL3) disposed at the first side adjacent to the high pressure side source terminal electrodes; output terminal electrodes (UL, VL, and WL) disposed at a second side other than the first side; a power source voltage supply terminal electrode (PL) disposed at a third side different from the first side and the second side; and a ground potential terminal electrode (NL) disposed at the third side away from the power source voltage supply terminal electrode.
Inventors:
SASAGAWA MASASHI (JP)
Application Number:
PCT/JP2012/082555
Publication Date:
June 20, 2013
Filing Date:
December 14, 2012
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
H01L25/07; H01L25/18
Domestic Patent References:
| WO1998010508A1 | 1998-03-12 |
Foreign References:
| JP2010129795A | 2010-06-10 | |||
| JPH1098125A | 1998-04-14 | |||
| JP2004214452A | 2004-07-29 | |||
| JP2009005512A | 2009-01-08 |
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