Title:
POWER MOSFET AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2024/060811
Kind Code:
A1
Abstract:
The present invention provides a power MOSFET and a manufacturing method therefor. The power MOSFET comprises a semiconductor structure, gate structures, source trench structures, a body region, source regions, contact regions, a barrier layer, a source, and a drain; the semiconductor layer comprises a substrate, a drift region, and a current transport layer; the gate structures are embedded in the current transport layer; each source trench structure is located between two adjacent gate structures and an upper trench is provided above the source trench structure; the body region is located on the upper surface layer of the current transport layer, and the bottoms of the upper trenches expose the body region; the source regions and the contact regions are located on the upper surface layer of the body region and are adjacent to each other; the barrier layer is located at the bottoms of the upper trenches and covers the body region; the source is in electrical contact with the barrier layer and the source trench structures, and the drain is in electrical contact with the substrate. According to the present invention, a source trench structure and an upper trench which is located above the source trench structure and exposes a body region are arranged between every two adjacent gate structures, and a barrier layer is arranged at the bottoms of the upper trenches, thereby reducing the forward conduction loss of a device, and improving the reverse current conduction capability of the device.
Inventors:
LI PING (CN)
MA RONGYAO (CN)
MA RONGYAO (CN)
Application Number:
PCT/CN2023/107982
Publication Date:
March 28, 2024
Filing Date:
July 18, 2023
Export Citation:
Assignee:
CHINA RESOURCES MICROELECTRONICS CHONGQING CO LTD (CN)
International Classes:
H01L29/78; H01L21/336; H01L27/07; H01L29/06
Domestic Patent References:
| WO2021072791A1 | 2021-04-22 |
Foreign References:
| CN113990923A | 2022-01-28 | |||
| CN114823911A | 2022-07-29 | |||
| CN114937693A | 2022-08-23 |
Attorney, Agent or Firm:
J.Z.M.C. PATENT AND TRADEMARK LAW OFFICE (GENERAL PARTNERSHIP) (CN)
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