Title:
POWER SEMICONDUCTOR DEVICE, PREPARATION METHOD THEREFOR, AND ELECTRONIC APPARATUS
Document Type and Number:
WIPO Patent Application WO/2023/051565
Kind Code:
A1
Abstract:
The present application provides a power semiconductor device, a preparation method therefor, and an electronic apparatus. The power semiconductor device comprises a functional layer, a first metal portion, a second metal portion and an insulating layer. The functional layer comprises a first region, a second region and a third region, the third region being located between the first region and the second region. The functional layer further comprises a first barrier groove disposed in the third region. The first metal portion is disposed on the first region, and the second metal portion is disposed on the second region. The insulating layer comprises a connected main body and a first barrier portion, the main body covering the first metal portion, the second metal portion and the third region, and the first barrier portion being filled into the first barrier groove. The functional layer further comprises at least one passivation layer.
Inventors:
WU MING (CN)
ZHOU JIAN (CN)
DING YONGHUAN (CN)
ZHOU JIAN (CN)
DING YONGHUAN (CN)
Application Number:
PCT/CN2022/121965
Publication Date:
April 06, 2023
Filing Date:
September 28, 2022
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L21/768
Foreign References:
| CN113990803A | 2022-01-28 | |||
| CN112951791A | 2021-06-11 | |||
| CN208986015U | 2019-06-14 | |||
| US20210118788A1 | 2021-04-22 | |||
| CN202111164572A | 2021-09-30 |
Attorney, Agent or Firm:
SCIHEAD IP LAW FIRM (CN)
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