Title:
POWER SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2015/107614
Kind Code:
A1
Abstract:
A semiconductor substrate (SB) has a first and second surface (S1, S2). A gate electrode (22) has a section embedded in a first trench (TG), and a capacitor electrode (23) has a section embedded in a second trench (TD). An interlayer insulating film (12) is disposed on the second surface (S2) and has a first and second contact hole (12T, 12D). A first main electrode (3) is disposed on the first surface (S1). A second main electrode (13) comes into contact with the second surface (S2) via the first contact hole (12T), and comes into contact with the capacitor electrode (23) via the second contact hole (12D). The first and second trenches (TG, TD) traverse a first area (A1) on the second surface (S2). The first contact hole (12T) is only located on the first area (A1) on the second surface (S2), and the second contact hole (12D) is only located on a second area (A2) on the second surface (S2).
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Inventors:
NAKAMURA KATSUMI (JP)
Application Number:
PCT/JP2014/050415
Publication Date:
July 23, 2015
Filing Date:
January 14, 2014
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L29/78; H01L29/739
Domestic Patent References:
| WO2002058160A1 | 2002-07-25 |
Foreign References:
| JP2012227335A | 2012-11-15 | |||
| JP2013140885A | 2013-07-18 |
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
Hidetoshi Yoshitake (JP)
Hidetoshi Yoshitake (JP)
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