Title:
POWER SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2016/143557
Kind Code:
A1
Abstract:
A power semiconductor device 100 wherein: a surface electrode 41a of a power semiconductor element 4 is obtained by laminating a Cu layer 82 on a Cu layer 81 which is mainly composed of Cu having a Vickers hardness of 200-350 Hv and which is formed by electroless plating, said Cu layer 82 being formed by electroless plating and being mainly composed of Cu which is softer than that of the Cu layer 81 and has a Vickers hardness of 70-150 Hv; and the Cu layer 82 is wire-bonded with a wire 6 that is formed of Cu.
Inventors:
OGAWA SHOHEI (JP)
KIKUCHI MASAO (JP)
FUJINO JUNJI (JP)
UCHIDA YOSHIHISA (JP)
SUZUKI YUICHIRO (JP)
YANAGIMOTO TATSUNORI (JP)
KIKUCHI MASAO (JP)
FUJINO JUNJI (JP)
UCHIDA YOSHIHISA (JP)
SUZUKI YUICHIRO (JP)
YANAGIMOTO TATSUNORI (JP)
Application Number:
PCT/JP2016/055803
Publication Date:
September 15, 2016
Filing Date:
February 26, 2016
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L21/60; H01L25/07; H01L25/18
Foreign References:
| JP3737482B2 | 2006-01-18 | |||
| JPH077783B2 | 1995-01-30 | |||
| JP2014082367A | 2014-05-08 | |||
| JPH07302811A | 1995-11-14 | |||
| JPS63148649A | 1988-06-21 |
Attorney, Agent or Firm:
OIWA Masuo et al. (JP)
Masuo Oiwa (JP)
Masuo Oiwa (JP)
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