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Title:
POWER SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/195140
Kind Code:
A1
Abstract:
This power semiconductor device is provided with: a first submodule having a first power semiconductor element; a second submodule having a second power semiconductor element; a positive-electrode-side conductor part and a negative-electrode-side conductor part; an intermediate substrate in which a negative-electrode-side opposing part opposing the negative-electrode-side conductor part with the first submodule therebetween and a positive-electrode-side opposing part opposing the positive-electrode-side conductor part with the second submodule therebetween are formed; and a plurality of signal terminals that transmit signals for controlling the first power semiconductor element or the second power semiconductor element. The second submodule is disposed such that the orientations of electrode surfaces of the second power semiconductor element and the first power semiconductor element are reversed to each other. A signal relay conductor part is disposed in a space that is in the height direction of the second submodule and that is present between a portion of the second submodule and the intermediate substrate. The intermediate substrate has wires that are connected to the signal relay conductor part and that are electrically connected to the signal terminals. Accordingly, productivity of the power semiconductor device is improved while increase of inductance of a main circuit is suppressed.

Inventors:
NAGASAKI HIRONORI (JP)
KATO TORU (JP)
HIRAO TAKASHI (JP)
TANAKA SHINTARO (JP)
Application Number:
PCT/JP2020/003314
Publication Date:
October 01, 2020
Filing Date:
January 30, 2020
Export Citation:
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Assignee:
HITACHI AUTOMOTIVE SYSTEMS LTD (JP)
International Classes:
H01L25/07; H01L25/18
Domestic Patent References:
WO2017168992A12017-10-05
Foreign References:
JP2006066895A2006-03-09
JP2013115167A2013-06-10
Attorney, Agent or Firm:
TODA Yuji (JP)
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