Title:
POWER SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/273099
Kind Code:
A9
Abstract:
The present invention provides a power semiconductor device. The power semiconductor device comprises: at least one transistor element, wherein the transistor element comprises a high-voltage power end, a low-voltage power end, and a control end, the high-voltage power end extends out of a package of the power semiconductor device to form a high-voltage pin of the power semiconductor device, the low-voltage power end extends out of the package of the power semiconductor device to form a low-voltage pin of the power semiconductor device, and the control end extends out of the package of the power semiconductor device to form a control pin of the power semiconductor device; and at least one detection diode unit, wherein a cathode of the detection diode unit is connected to the high-voltage power end of the at least one transistor element, and an anode of the detection diode unit extends out of the package of the power semiconductor device to form a detection pin of the power semiconductor device.
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Inventors:
CHEN YANPING (CN)
DOU ZECHUN (CN)
XIE SHUNMENG (CN)
PENG YONGDIAN (CN)
ZHU WU (CN)
ZHANG RONG (CN)
RONG CHUNHUI (CN)
YUAN YONG (CN)
CHEN MINGYI (CN)
TAN YIFAN (CN)
DOU ZECHUN (CN)
XIE SHUNMENG (CN)
PENG YONGDIAN (CN)
ZHU WU (CN)
ZHANG RONG (CN)
RONG CHUNHUI (CN)
YUAN YONG (CN)
CHEN MINGYI (CN)
TAN YIFAN (CN)
Application Number:
PCT/CN2021/130401
Publication Date:
March 07, 2024
Filing Date:
November 12, 2021
Export Citation:
Assignee:
CRRC ZHUZHOU INST CO LTD (CN)
International Classes:
H01L25/18; G01R19/165; H02H3/08
Attorney, Agent or Firm:
SHANGHAI PATENT & TRADEMARK LAW OFFICE, LLC (CN)
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