POWER SEMICONDUCTOR MODULE DRIVE CONTROL SYSTEM AND POWER SEMICONDUCTOR MODULE CONTROL CIRCUIT

Title:

POWER SEMICONDUCTOR MODULE DRIVE CONTROL SYSTEM AND POWER SEMICONDUCTOR MODULE CONTROL CIRCUIT

Document Type and Number:

WIPO Patent Application WO/2015/076014

Kind Code:

A1

Abstract:

In the present invention, an insulated gate bipolar transistor (IGBT) that is provided on the high voltage side detects a current using sensing functions of the IGBT, and when it is determined that the current detected by means of a short-circuit protection unit is an overcurrent, breakage of the IGBT due to the overcurrent is eliminated by means of a gate drive unit. The short-circuit protection unit outputs alarm signals to a synthesizing unit when the overcurrent is detected. Furthermore, a temperature in a power semiconductor module is detected by means of a temperature detection element, the detected temperature is converted into digital signals by means of a temperature information generating unit, and the digitized temperature information is outputted to the synthesizing unit. The synthesizing unit synthesizes the temperature information and the alarm signals into a synthesized output, and transmits the synthesized output to a control unit on the low voltage side.

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Inventors:

TERASAWA NORIHO (JP)
MOMOSE YASUYUKI (JP)

Application Number:

PCT/JP2014/075346

Publication Date:

May 28, 2015

Filing Date:

September 25, 2014

Export Citation:

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Assignee:

FUJI ELECTRIC CO LTD (JP)

International Classes:

H02M1/00; H03K17/08

Foreign References:

JP2011101466A	2011-05-19
JP2008270548A	2008-11-06
JP2002027665A	2002-01-25
JPH1117508A	1999-01-22
JP2009171312A	2009-07-30
JP2008277484A	2008-11-13
JPH07115354A	1995-05-02

Other References: