Title:
PRECURSOR COMPOUND FOR ATOMIC LAYER DEPOSITION (ALD) OR CHEMICAL VAPOR DEPOSITION (CVD), AND ALD/CVD METHOD USING SAME
Document Type and Number:
WIPO Patent Application WO/2021/145661
Kind Code:
A2
Abstract:
The present invention relates to a precursor compound and, more specifically, to: a precursor compound comprising a metal of Group 13 of the Periodic Table and available for thin film deposition through atomic layer deposition (ALD) or chemical vapor deposition (CVD); and a method for manufacturing a thin film by using same.
Inventors:
YEOM KYU-HYUN (KR)
MUN KI-YEUNG (KR)
LEE HYUN-KYUNG (KR)
SEOK JANG-HYEON (KR)
PARK JUNG WOO (KR)
MUN KI-YEUNG (KR)
LEE HYUN-KYUNG (KR)
SEOK JANG-HYEON (KR)
PARK JUNG WOO (KR)
Application Number:
PCT/KR2021/000443
Publication Date:
July 22, 2021
Filing Date:
January 13, 2021
Export Citation:
Assignee:
HANSOL CHEMICAL CO LTD (KR)
International Classes:
C23C16/455; C07F5/06; C23C16/18; C23C16/34; C23C16/40
Attorney, Agent or Firm:
HANYANG PATENT FIRM (KR)
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