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Title:
PREPARATION METHOD FOR DOPED STRUCTURE, AND SEMICONDUCTOR STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2023/134099
Kind Code:
A1
Abstract:
Provided in the embodiments of the present disclosure are a preparation method for a doped structure, and a semiconductor structure. The method comprises: providing a substrate including a material layer, and performing doping processing on the material layer to obtain a doped material layer; generating a first barrier layer on the doped material layer; performing annealing processing on the doped material layer, and performing control to generate a second barrier layer between the doped material layer and the first barrier layer; and removing the first barrier layer and the second barrier layer to obtain a doped structure.

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Inventors:
LI WEI (CN)
Application Number:
PCT/CN2022/093891
Publication Date:
July 20, 2023
Filing Date:
May 19, 2022
Export Citation:
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Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/3105; H01L21/265
Foreign References:
CN104143503A2014-11-12
CN102013392A2011-04-13
CN108010840A2018-05-08
CN102637581A2012-08-15
Attorney, Agent or Firm:
CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)
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