Title:
PREPARATION METHOD FOR GAS DETECTOR, AND GAS DETECTOR
Document Type and Number:
WIPO Patent Application WO/2022/141172
Kind Code:
A1
Abstract:
A preparation method for a gas detector, and a gas detector. The method comprises: providing an Si substrate (201) having a GaN buffer layer (202) on a surface thereof; forming an epitaxial laminated layer (21) on the GaN buffer layer (202), wherein the epitaxial laminated layer (21) sequentially comprises, from bottom to top, a GaN channel layer (203), an AlN insertion layer (204), an AlGaN barrier layer (205) and a GaN cap layer (206); etching the epitaxial laminated layer (21) to form a step-shaped heterostructure (22) and also realize device isolation; forming an ohmic contact electrode (207) and a Schottky contact electrode (208), wherein the ohmic contact electrode (207) is located on the GaN cap layer (206), and the Schottky contact electrode (208) is located on the GaN buffer layer (202) at the bottom of an etched area; carrying out annealing; and forming a sensitive material layer (209), wherein the sensitive material layer (209) is connected to the heterostructure (22) and the Schottky contact electrode (208). By means of the gas detector, a turn-on voltage and a power loss are reduced, and the distance between the sensitive material layer and two-dimensional electron gas is also shortened; and charge carriers are no longer transmitted through the AlGaN barrier layer in a tunneling manner, such that high mobility is maintained, and the device has higher sensitivity.
Inventors:
LU HONGLIANG (CN)
CHEN DINGBO (CN)
CHEN DINGBO (CN)
Application Number:
PCT/CN2020/141322
Publication Date:
July 07, 2022
Filing Date:
December 30, 2020
Export Citation:
Assignee:
GUANGHUA LINGANG ENGINEERING APPLICATION AND TECH R&D SHANGHAI CO LTD (CN)
International Classes:
G01N27/12; H01L29/205; H01L21/329; H01L29/45; H01L29/47; H01L29/872
Foreign References:
| CN1971943A | 2007-05-30 | |||
| US20180313785A1 | 2018-11-01 | |||
| CN111323458A | 2020-06-23 | |||
| CN110927216A | 2020-03-27 | |||
| CN106783997A | 2017-05-31 | |||
| JP2002064103A | 2002-02-28 |
Other References:
BAG ATANU; MOON DONG-BIN; PARK KYUNG-HO; CHO CHU-YOUNG; LEE NAE-EUNG: "Room-temperature-operated fast and reversible vertical-heterostructure-diode gas sensor composed of reduced graphene oxide and AlGaN/GaN", SENSORS AND ACTUATORS B: CHEMICA, vol. 296, 18 June 2019 (2019-06-18), NL , pages 1 - 10, XP085739802, ISSN: 0925-4005, DOI: 10.1016/j.snb.2019.126684
Attorney, Agent or Firm:
SHANGHAI WINSUN INTELLECTUAL PROPERTY AGENCY (CN)
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