Title:
PREPARATION METHOD FOR IGZO THIN FILM TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2019/127634
Kind Code:
A1
Abstract:
A preparation method for an IGZO thin film transistor, comprising: S1, enabling a first metal layer to form a gate by means of a first mask, and sequentially forming a gate insulation layer, an IGZO semiconductor layer and a second metal layer on the gate; S2, coating the second metal layer with a photoresist layer, exposing and developing the photoresist layer by means of a second mask, and etching the second metal layer and the IGZO semiconductor layer simultaneously by using hydrogen peroxide etching liquid, the second metal layer being etched to form a source and a drain; S3, forming a passivation layer on the source and the drain, and forming a contact hole above the drain by means of a third mask; and S4, forming a pixel electrode on the passivation layer by means of a fourth mask, and connecting the pixel electrode with the drain via the contact hole. By using the hydrogen peroxide etching liquid, both the second metal layer and the IGZO semiconductor layer can be etched, thus shortening process time and improving production efficiency.
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Inventors:
GAN QIMING (CN)
Application Number:
PCT/CN2018/071379
Publication Date:
July 04, 2019
Filing Date:
January 04, 2018
Export Citation:
Assignee:
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECH CO LTD (CN)
International Classes:
H01L29/786
Foreign References:
| CN102629591A | 2012-08-08 | |||
| CN102956676A | 2013-03-06 | |||
| CN103094204A | 2013-05-08 | |||
| US20030107023A1 | 2003-06-12 |
Attorney, Agent or Firm:
SHENZHEN RONDA PATENT AND TRADEMARK LAW OFFICE (CN)
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