Title:
PREPARATION METHOD OF MOLYBDENUM DISULFIDE THIN FILM, AND MOLYBDENUM DISULFIDE THIN FILM
Document Type and Number:
WIPO Patent Application WO/2016/192391
Kind Code:
A1
Abstract:
Disclosed are a preparation method of a molybdenum disulfide thin film, and molybdenum disulfide thin film. The present invention uses chemical vapor deposition (CVD) to directly grow a molybdenum sulfide (MoS2) thin film having a large area, high quality and few defects on a silicon substrate coated with an oxide buffer layer, and innovatively realizes fast transfer of the MoS2 thin film.
Inventors:
LIU XINKE (CN)
HE JIAZHU (CN)
LV YOUMING (CN)
HAN SHUN (CN)
CAO PEIJIANG (CN)
LIU WENJUN (CN)
ZENG YUXIANG (CN)
JIA FANG (CN)
ZHU DELIANG (CN)
HE JIAZHU (CN)
LV YOUMING (CN)
HAN SHUN (CN)
CAO PEIJIANG (CN)
LIU WENJUN (CN)
ZENG YUXIANG (CN)
JIA FANG (CN)
ZHU DELIANG (CN)
Application Number:
PCT/CN2015/099600
Publication Date:
December 08, 2016
Filing Date:
December 29, 2015
Export Citation:
Assignee:
UNIV SHENZHEN (CN)
International Classes:
C23C16/30; C23C16/44
Foreign References:
| CN104947070A | 2015-09-30 | |||
| CN104218114A | 2014-12-17 | |||
| CN102067335A | 2011-05-18 | |||
| CN103620733A | 2014-03-05 | |||
| US20110209816A1 | 2011-09-01 |
Attorney, Agent or Firm:
HENSEN INTELLECTUAL PROPERTY FIRM (CN)
深圳市恒申知识产权事务所（普通合伙） (CN)
深圳市恒申知识产权事务所（普通合伙） (CN)
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