Title:
PREPARATION METHOD FOR QUANTUM DOT LIGHT EMITTING DIODE
Document Type and Number:
WIPO Patent Application WO/2021/129710
Kind Code:
A1
Abstract:
The present application discloses a preparation method for a quantum dot light emitting diode. The preparation method comprises the following steps for preparing a carrier transport layer: providing a base, a quantum dot light emitting layer being formed on the base; providing a ligand solution, the ligand solution containing: at least one of an ammonium salt, an organic amine, an ester compound and a phenolic compound; depositing the ligand solution on the quantum dot light emitting layer to prepare a quantum dot light emitting layer with a ligand modified on the surface thereof; and providing a carrier transport layer ink, and depositing the carrier transport layer ink on the quantum dot light emitting layer with a ligand modified on the surface thereof, so as to prepare a carrier transport layer. Modifying the surface of a quantum dot light emitting layer increases the interface compatibility between the carrier transport layer ink and the quantum dot light emitting layer, and improves the film-forming property of the carrier transport layer.
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Inventors:
XIANG CHAOYU (CN)
ZHANG JIE (CN)
ZHANG JIE (CN)
Application Number:
PCT/CN2020/138851
Publication Date:
July 01, 2021
Filing Date:
December 24, 2020
Export Citation:
Assignee:
TCL TECH GROUP CORP (CN)
International Classes:
H01L51/56; H01L51/50
Foreign References:
| CN109935718A | 2019-06-25 | |||
| CN107946485A | 2018-04-20 | |||
| CN109935715A | 2019-06-25 | |||
| US20190119569A1 | 2019-04-25 |
Attorney, Agent or Firm:
SHENZHEN ZHONGYI UNION INTELLECTUAL PROPERTY AGENCY CO.,LTD. (CN)
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