PREPARATION METHOD FOR SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

WIPO Patent Application WO/2022/022055

A1

A preparation method for a semiconductor device and a semiconductor device, relating to the technical field of semiconductors. The method comprises: providing a semiconductor substrate, the semiconductor substrate comprising a shallow trench (1) and an active area (2); forming an oxygen-containing layer (3) on an outer surface where the shallow trench (1) and the active area (2) are exposed; filling, on the surface where the oxygen-containing layer (3) is comprised, the shallow trench (1) with a first isolation layer (4) of a set height, the set height being less than the height of the active area (2); forming an etch stop layer (5) on an upper surface of the first isolation layer (4); filling a second isolation layer (6) above the etch stop layer (5) in the shallow trench (1) to form a shallow trench isolation structure; and etching the active area (2) and the shallow trench isolation structure to form a wordline trench (7), the bottom of the wordline trench (7) in the shallow trench isolation structure being higher than the set height. According to the preparation method, the etch stop layer can be used to control the depth of the wordline trench in the shallow trench isolation structure to be as consistent as possible with the depth of the wordline trench in the active area.

ZHANG KUI (CN)
YING ZHAN (CN)

PCT/CN2021/097761

February 03, 2022

June 01, 2021

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CHANGXIN MEMORY TECH INC (CN)

H01L21/762; H01L21/8242; H01L27/108

CN107946232A	2018-04-20
CN106992156A	2017-07-28
US20140306277A1	2014-10-16
JP2013026431A	2013-02-04

BEIJING INTELLEGAL INTELLECTUAL PROPERTY AGENT LTD. (CN)

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