Title:
PREPARATION METHOD FOR SEMICONDUCTOR PACKAGING MATERIAL OR SUBSTRATE MATERIAL, AND SEMICONDUCTOR PACKAGING MATERIAL OR SUBSTRATE MATERIAL OBTAINED THEREBY AND APPLICATION THEREOF
Document Type and Number:
WIPO Patent Application WO/2023/029865
Kind Code:
A1
Abstract:
The present invention provides a preparation method for a semiconductor packaging material or a substrate material, comprising: providing spherical or amorphous polysiloxane; rising, in an oxidizing gas atmosphere before organic components in polysiloxane particles are completely oxidized, the temperature to 600-800°C for heat treatment, so that a dense silicon oxide layer is formed on the surface of the powder, and the organic components in the heat-treated powder are thermally decomposed into carbon elements; performing calcination to obtain a black spherical or amorphous silicon oxide filler, wherein the calcination temperature is greater than 800°C and less than 1100°C, so as to condense remaining silicon hydroxyl groups; and tightly filling and grading the black spherical or amorphous silicon oxide filler in a resin to form a semiconductor packaging material or a substrate material. The black spherical or amorphous silicon oxide can be directly made into a gray or black semiconductor packaging material or substrate material, thereby fundamentally solving the electrical conduction problem caused by the introduction of acetylene black staining and the problem of difficulty in laser processing of silicon dioxide.
Inventors:
WANG KE (CN)
FANG YUANFENG (CN)
SHEN HAIBIN (CN)
CHEN SHUZHEN (CN)
FANG YUANFENG (CN)
SHEN HAIBIN (CN)
CHEN SHUZHEN (CN)
Application Number:
PCT/CN2022/110053
Publication Date:
March 09, 2023
Filing Date:
August 03, 2022
Export Citation:
Assignee:
ZHEJIANG THIRD AGE MATERIAL TECH CO LTD (CN)
International Classes:
C08K7/18; C08K3/36; C08K9/06; H01L23/29
Foreign References:
| CN113736142A | 2021-12-03 | |||
| CN111868159A | 2020-10-30 | |||
| CN111886201A | 2020-11-03 | |||
| CN112236393A | 2021-01-15 | |||
| CN112624126A | 2021-04-09 | |||
| US20170141007A1 | 2017-05-18 |
Attorney, Agent or Firm:
SHANGHAI ZHI XIN PATENT AGENT LTD. (CN)
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