Title:
PREPARATION METHOD FOR THIN-FILM CAPACITOR, AND THIN-FILM CAPACITOR
Document Type and Number:
WIPO Patent Application WO/2022/040987
Kind Code:
A1
Abstract:
Disclosed in the present application are a preparation method for a thin-film capacitor, and the thin-film capacitor. The preparation method comprises: providing a substrate; sequentially forming a sacrificial layer, a dielectric film layer, a first electrode layer and a capacitor base layer on the substrate; removing the substrate and the sacrificial layer; forming a second electrode layer on the side of the dielectric film layer away from the first electrode layer to obtain a thin-film capacitor structure; and packaging the thin-film capacitor by adopting a 3D printing technology. According to the method, the thin-film capacitor with high voltage resistance, long service life, stable temperature characteristic and low loss can be prepared, and can be applied to various related electronic devices, large-scale integrated circuits and the like.
Inventors:
JIA TINGTING (CN)
HU FANG (CN)
FANG WEI (CN)
DING ZHEN (CN)
YU SHUHUI (CN)
SUN RONG (CN)
HU FANG (CN)
FANG WEI (CN)
DING ZHEN (CN)
YU SHUHUI (CN)
SUN RONG (CN)
Application Number:
PCT/CN2020/111447
Publication Date:
March 03, 2022
Filing Date:
August 26, 2020
Export Citation:
Assignee:
SHENZHEN INST OF ADV TECH CAS (CN)
International Classes:
H01G4/33
Foreign References:
| CN105006362A | 2015-10-28 | |||
| CN105742060A | 2016-07-06 | |||
| CN109622968A | 2019-04-16 |
Attorney, Agent or Firm:
CHINA WISPRO INTELLECTUAL PROPERTY LLP. (CN)
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