Title:
PROCESS FOR FABRICATING A SILICON-BASED THIN-FILM PHOTOVOLTAIC CELL
Document Type and Number:
WIPO Patent Application WO/2009/133315
Kind Code:
A3
Abstract:
The invention relates to a process for fabricating a silicon-based thin-film photovoltaic cell. This fabrication process is characterized in that it includes a step a) of depositing a p-doped or n-doped amorphous silicon film, the X-ray diffraction spectrum of which has a line centred at 28° that has a mid-height width, denoted by a, such that 4.7° ≤ a < 6.0° on a substrate (1). The invention is applicable in particular in the energy generation field.
Inventors:
DUCROS CEDRIC (FR)
SANCHETTE FREDERIC (FR)
SECOUARD CHRISTOPHE (FR)
SANCHETTE FREDERIC (FR)
SECOUARD CHRISTOPHE (FR)
Application Number:
PCT/FR2009/000461
Publication Date:
November 11, 2010
Filing Date:
April 20, 2009
Export Citation:
Assignee:
COMMISSARIAT ENERGIE ATOMIQUE (FR)
DUCROS CEDRIC (FR)
SANCHETTE FREDERIC (FR)
SECOUARD CHRISTOPHE (FR)
DUCROS CEDRIC (FR)
SANCHETTE FREDERIC (FR)
SECOUARD CHRISTOPHE (FR)
International Classes:
H01L31/18; H01L31/0745; H01L31/20
Domestic Patent References:
| WO2006100403A1 | 2006-09-28 |
Foreign References:
| US5994164A | 1999-11-30 |
Attorney, Agent or Firm:
NOËL, Chantal (36 rue de St Pétersbourg, Paris, FR)
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