PROCESS FOR GROWING SEMICONDUCTOR CRYSTAL

Title:

PROCESS FOR GROWING SEMICONDUCTOR CRYSTAL

Document Type and Number:

WIPO Patent Application WO/1991/014280

Kind Code:

A1

Abstract:

A process for growing III to V compound semiconductors containing arsenic and phosphorus, particularly a mixed crystal of InGaAsP, on a substrate by vapor phase epitaxy from a starting gas mixture comprising AsH3 or H2AsCnH2n+1 (wherein n is 1, 2 or 3) as the arsenic source, H2PC4H9 as the phosphorus source, and a group III element source. A mixed crystal free from any unevenness in the distribution of composition can be grown on the substrate, because there is no difference in the thermal decomposition temperature between AsH3 or H2AsCnH2n+1 and H2PC4H9.

More Like This:

JP6318363	Plasma processing equipment and methods, manufacturing methods for electronic devices
JP4337749	How to form gallium nitride

Inventors:

KURAMATA AKITO (JP)

Application Number:

PCT/JP1991/000349

Publication Date:

September 19, 1991

Filing Date:

March 14, 1991

Export Citation:

Click for automatic bibliography generation Help

Assignee:

FUJITSU LTD (JP)

International Classes:

H01L21/205; C30B25/02; H01S5/00; H01S5/323; (IPC1-7): H01L21/205

Foreign References:

JPS5854627A	1983-03-31
JPS5074970A	1975-06-19
JPH01259524A	1989-10-17

Other References:

Lecture preparations for the 36th Appl. Phys. related joint lecture, (1989-4-1), p.334 (Lecture No. 3p-ZN-61).
Appl. Phys. Lett. 50 ( 17 ), (1987-4), p.1194-1196.
Appl. Phys. Lett. 50 ( 4 ), (1987-4), p.218-220.
See also references of EP 0477374A4

Download PDF:

View/Download PDF PDF Help

Previous Patent: ELECTRICAL COMPONENT (FUSE) AND METHOD OF MAKING IT

Next Patent: ETCHING METHOD FOR OBTAINING AT LEAST ONE CAVITY IN A SUBSTRATE AND SUBSTRATE OBTAINED BY SUCH METHO...