Title:
PROCESS FOR THE MANUFACTURE OF WAFERS FOR SOLAR CELLS AT AMBIENT PRESSURE
Document Type and Number:
WIPO Patent Application WO/2011/032983
Kind Code:
A3
Abstract:
Solar cells are manufactured from P-type doped monocrystalline or polycrystalline silicon ingots by sawing wafers and applying an N-type doping. The wafers can be treated by etching them, in a plasma assisted process, with an etching gas containing or consisting of carbonyl fluoride. Hereby, the surface is roughened so that the degree of light reflection is reduced, or glass-like phosphorus-containing oxide coatings caused by phosphorus doping are removed. Carbonyl fluoride is also very suitable to selectively etch silicon oxide in silicon oxide/silicon composites.
Inventors:
RIVA MARCELLO (DE)
LOPEZ ALONSO ELENA (DE)
LINASCHKE DORIT (DE)
DANI INES (DE)
KASKEL STEFAN (DE)
LOPEZ ALONSO ELENA (DE)
LINASCHKE DORIT (DE)
DANI INES (DE)
KASKEL STEFAN (DE)
Application Number:
PCT/EP2010/063545
Publication Date:
October 13, 2011
Filing Date:
September 15, 2010
Export Citation:
Assignee:
SOLVAY FLUOR GMBH (DE)
RIVA MARCELLO (DE)
LOPEZ ALONSO ELENA (DE)
LINASCHKE DORIT (DE)
DANI INES (DE)
KASKEL STEFAN (DE)
RIVA MARCELLO (DE)
LOPEZ ALONSO ELENA (DE)
LINASCHKE DORIT (DE)
DANI INES (DE)
KASKEL STEFAN (DE)
International Classes:
H01L31/18; H01L21/3065
Domestic Patent References:
| WO2009113402A1 | 2009-09-17 | |||
| WO2007125851A1 | 2007-11-08 |
Foreign References:
| JP2008177375A | 2008-07-31 |
Other References:
LOPEZ E ET AL: "Plasma enhanced chemical etching at atmospheric pressure for silicon wafer processing", 21ST EUROPEAN PHOTOVOLTAIC SOLAR ENERGY CONFERENCE, 4-8 SEPTEMBER 2006, DRESDEN, GERMANY, 4 September 2006 (2006-09-04), pages 1161 - 1166, XP002600059
LOPEZ E ET AL: "Plasma etching at atmospheric pressure for rear emitter removal in crystalline Si solar cells", 21ST EUROPEAN PHOTOVOLTAIC SOLAR ENERGY CONFERENCE, 4-8 SEPTEMBER 2006, DRESDEN, GERMANY, 4 September 2006 (2006-09-04), pages 1045 - 1048, XP002600060
LINASCHKE D ET AL: "Plasma enhanced chemical etching at atmospheric pressure for crystalline silicon wafer processing and process control by in-line FTIR gas spectroscopy", 23RD EUROPEAN PHOTOVOLTAIC SOLAR ENERGY CONFERENCE, 1-5 SEPTEMBER 2008, VALENCIA, SPAIN, 1 September 2008 (2008-09-01), pages 1907 - 1910, XP002600061
HOPFE V ET AL: "Atmospheric pressure PECVD and atmospheric plasma chemical etching for continuous processing of crystalline silicon solar wafers", 21ST EUROPEAN PHOTOVOLTAIC SOLAR ENERGY CONFERENCE, 4-8 SEPTEMBER 2006, DRESDEN, GERMANY, 4 September 2006 (2006-09-04), pages 1146 - 1149, XP002600062
LINASCHKE D ET AL: "In-line plasma-chemical etching of crystalline silicon solar wafers at atmospheric pressure", IEEE TRANSACTIONS ON PLASMA SCIENCE IEEE USA, vol. 37, no. 6, June 2009 (2009-06-01), pages 979 - 984, XP002600063, ISSN: 0093-3813
LOPEZ E ET AL: "Plasma etching at atmospheric pressure for rear emitter removal in crystalline Si solar cells", 21ST EUROPEAN PHOTOVOLTAIC SOLAR ENERGY CONFERENCE, 4-8 SEPTEMBER 2006, DRESDEN, GERMANY, 4 September 2006 (2006-09-04), pages 1045 - 1048, XP002600060
LINASCHKE D ET AL: "Plasma enhanced chemical etching at atmospheric pressure for crystalline silicon wafer processing and process control by in-line FTIR gas spectroscopy", 23RD EUROPEAN PHOTOVOLTAIC SOLAR ENERGY CONFERENCE, 1-5 SEPTEMBER 2008, VALENCIA, SPAIN, 1 September 2008 (2008-09-01), pages 1907 - 1910, XP002600061
HOPFE V ET AL: "Atmospheric pressure PECVD and atmospheric plasma chemical etching for continuous processing of crystalline silicon solar wafers", 21ST EUROPEAN PHOTOVOLTAIC SOLAR ENERGY CONFERENCE, 4-8 SEPTEMBER 2006, DRESDEN, GERMANY, 4 September 2006 (2006-09-04), pages 1146 - 1149, XP002600062
LINASCHKE D ET AL: "In-line plasma-chemical etching of crystalline silicon solar wafers at atmospheric pressure", IEEE TRANSACTIONS ON PLASMA SCIENCE IEEE USA, vol. 37, no. 6, June 2009 (2009-06-01), pages 979 - 984, XP002600063, ISSN: 0093-3813
Attorney, Agent or Firm:
JACQUES, Philippe et al. (310, Brussels, BE)
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