PROCESS FOR PRODUCING LAYERED MEMBER AND LAYERED MEMBER

Title:

PROCESS FOR PRODUCING LAYERED MEMBER AND LAYERED MEMBER

Document Type and Number:

WIPO Patent Application WO/2005/088666

Kind Code:

A1

Abstract:

A photoelectric surface member capable of enhancing of quantum efficiency. There is provided photoelectric surface member (1a) comprising a crystalline layer produced from a nitride semiconductor material, which is composed of nitride semiconductor crystal layer (10) wherein the direction from first face (101) to second face (102) is a negative c-polarity direction of crystal, adhesive layer (12) provided along the first face (101) of the nitride semiconductor crystal layer (10), and glass plate (14) adhesion fixed to the adhesive layer (12) so as to have the adhesive layer (12) interposed between the glass plate (14) and the nitride semiconductor crystal layer (10). The nitride semiconductor crystal layer (10) can be produced from substrate for crystal growth (50) whose main surface plane direction is (111).

Inventors:

NIHASHI TOKUAKI (JP)
SUMIYA MASATOMO (JP)
HAGINO MINORU (JP)
FUKE SHUNRO (JP)

Application Number:

PCT/JP2005/003879

Publication Date:

September 22, 2005

Filing Date:

March 07, 2005

Export Citation:

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Assignee:

HAMAMATSU PHOTONICS KK (JP)
NIHASHI TOKUAKI (JP)
SUMIYA MASATOMO (JP)
HAGINO MINORU (JP)
FUKE SHUNRO (JP)

International Classes:

C23C16/01; C30B29/38; C30B29/40; H01J1/34; H01J9/12; H01J40/06; H01L21/205; (IPC1-7): H01J1/34; C23C16/01; C30B29/38; H01J40/06; H01L21/205

Domestic Patent References:

WO2003107386A1

2003-12-24

Foreign References:

JPH1168157A	1999-03-09
JP2002348199A	2002-12-04
JP2000011856A	2000-01-14
JP2002075871A	2002-03-15
JP2002241198A	2002-08-28
JPH0896705A	1996-04-12
JPH10241554A	1998-09-11

Other References: