PROCESS FOR PRODUCING SILICON CARBIDE SEMICONDUCTOR DEVICE

Title:

PROCESS FOR PRODUCING SILICON CARBIDE SEMICONDUCTOR DEVICE

Document Type and Number:

WIPO Patent Application WO/2008/065782

Kind Code:

A1

Abstract:

A process for producing a silicon carbide semiconductor device, comprising the steps of on semiconductor laminate substrate (4) having first conductive silicon carbide crystal substrate (1), first conductive silicon carbide crystal layer (2), second conductive silicon carbide crystal layer (3) and first conductive semiconductor region (5), forming groove (7) passing through the first conductive semiconductor region (5) and second conductive silicon carbide crystal layer (3) and having its bottom plane (7b) defined by the first conductive silicon carbide crystal layer (2); forming silicon film (14) on at least part of the groove (7); heating the semiconductor laminate substrate (4) provided with the silicon film (14) at a temperature not lower than the melting point of the silicon film (14); removing the silicon film (14) after the heating; forming a gate insulating film on an exposed surface resulting from the removal of the silicon film (14); and forming a gate electrode layer on the surface of the gate insulating film.

Inventors:

FUJIKAWA KAZUHIRO (JP)

Application Number:

PCT/JP2007/065818

Publication Date:

June 05, 2008

Filing Date:

August 13, 2007

Export Citation:

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Assignee:

SUMITOMO ELECTRIC INDUSTRIES (JP)
FUJIKAWA KAZUHIRO (JP)

International Classes:

H01L21/336; H01L29/12; H01L29/78

Foreign References:

JPH09199724A	1997-07-31
JP2003224277A	2003-08-08
JPH09199724A	1997-07-31
JPH10247732A	1998-09-14

Other References: