PROCESS FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL

Title:

PROCESS FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL

Document Type and Number:

WIPO Patent Application WO/2006/137500

Kind Code:

A1

Abstract:

A process for producing a silicon carbide single crystal which comprises bringing a silicon-carbide single-crystal substrate into contact with a melt obtained by melting a raw material comprising silicon and carbon to grow a silicon carbide single crystal on the substrate, characterized by conducting at least once a cycle comprising a) a step in which, after the seed crystal substrate is brought into contact with the melt surface to grow a single crystal, the seed crystal substrate is separated from the melt surface to stop the growth of the single crystal, and b) a step in which the seed crystal substrate is brought into contact with the melt surface again to grow the single crystal. This process is further characterized in that the seed crystal is a 6H-type silicon carbide single crystal or a 15R-type silicon carbide single crystal and the target single crystal to be obtained is a 4H-type silicon carbide single crystal.

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WO/2020/235225	SILICON CARBIDE SUBSTRATE
WO/2013/055016	PRODUCTION METHOD FOR SILICON CARBIDE POWDER AND SILICON CARBIDE POWDER PRODUCED THEREBY

Inventors:

SAKAMOTO HIDEMITSU (JP)

Application Number:

PCT/JP2006/312553

Publication Date:

December 28, 2006

Filing Date:

June 16, 2006

Export Citation:

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Assignee:

TOYOTA MOTOR CO LTD (JP)
SAKAMOTO HIDEMITSU (JP)

International Classes:

C30B29/36; C30B17/00

Foreign References:

JP2005082435A	2005-03-31
JP2000264790A	2000-09-26
JPH07172998A	1995-07-11

Other References: