PROCESS FOR PRODUCING SINGLE-CRYSTAL SILICON CARBIDE

Title:

PROCESS FOR PRODUCING SINGLE-CRYSTAL SILICON CARBIDE

Document Type and Number:

WIPO Patent Application WO/2015/107772

Kind Code:

A1

Abstract:

A process for producing single-crystal silicon carbide is provided with which it is possible to easily separate the single-crystal silicon carbide from the pedestal. The process comprises a step (S10) in which a seed substrate is affixed to a pedestal through a stress-relieving layer, a step (S20) in which single-crystal silicon carbide is grown on the seed substrate, a step (S30) in which the single-crystal silicon carbide is separated from the pedestal at the stress-relieving layer, and a step (S40) in which the residue of the stress-relieving layer which is adherent to the single-crystal silicon carbide after the separation step (S30) is removed.

Inventors:

HORI TSUTOMU (JP)
UETA SHUNSAKU (JP)
MATSUSHIMA AKIRA (JP)

Application Number:

PCT/JP2014/080849

Publication Date:

July 23, 2015

Filing Date:

November 21, 2014

Export Citation:

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Assignee:

SUMITOMO ELECTRIC INDUSTRIES (JP)

International Classes:

C30B29/36; C30B23/06; C30B33/00

Foreign References:

JP2010064918A	2010-03-25
JP2013067522A	2013-04-18
JP2006143511A	2006-06-08

Attorney, Agent or Firm:

Fukami Patent Office, p. c. (JP)
Patent business corporation Fukami patent firm (JP)

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