Title:
PROCESS FOR PRODUCING SOI WAFER AND SOI WAFER
Document Type and Number:
WIPO Patent Application WO/2007/074552
Kind Code:
A1
Abstract:
A process for producing an SOI wafer, in which the occurrence of thermal strain,
peeling, cracking, etc. attributed to a difference in thermal expansion coefficient
between transparent insulating substrate and SOI layer can be prevented through
simple and easy processing, and in which upon formation of a semiconductor device
on the SOI layer, a reduction of light leakage can be attained. A single-crystal
silicon with its entire surface falling in N-region outside OSF-region is grown
according to Czochralski technique and sliced to thereby produce an N-region
single-crystal silicon wafer. An implantation of hydrogen ion or rare gas ion
from a surface of the N-region single-crystal silicon wafer is carried out to
thereby form an ion implantation layer in the wafer. The ion implantation surface
of the N-region single-crystal silicon wafer and/or a surface of transparent
insulating substrate are/is treated with plasma and/or ozone. The ion implantation
surface of the N-region single-crystal silicon wafer and the surface of the transparent
insulating substrate with the treated surfaces as junction surfaces are joined
in close contact at room temperature. The ion implantation layer is impacted
so as to attain mechanical detachment of the single-crystal silicon wafer, thereby
accomplishing formation of an SOI layer on the transparent insulating substrate.
Inventors:
ITO ATSUO (JP)
KUBOTA YOSHIHIRO (JP)
MITANI KIYOSHI (JP)
KUBOTA YOSHIHIRO (JP)
MITANI KIYOSHI (JP)
Application Number:
PCT/JP2006/313911
Publication Date:
July 05, 2007
Filing Date:
July 12, 2006
Export Citation:
Assignee:
SHINETSU CHEMICAL CO (JP)
ITO ATSUO (JP)
KUBOTA YOSHIHIRO (JP)
MITANI KIYOSHI (JP)
ITO ATSUO (JP)
KUBOTA YOSHIHIRO (JP)
MITANI KIYOSHI (JP)
International Classes:
C30B29/06; H01L21/02; H01L27/12
Domestic Patent References:
| WO2004083496A1 | 2004-09-30 |
Foreign References:
| JP2001511608A | 2001-08-14 | |||
| JPH07249749A | 1995-09-26 | |||
| JP2000036583A | 2000-02-02 | |||
| JP2004221198A | 2004-08-05 | |||
| JPH0391227A | 1991-04-16 | |||
| JPH0529183A | 1993-02-05 | |||
| JP2001244444A | 2001-09-07 |
Other References:
ABE T. ET AL.: "Hariawase SOI Wafer no Kongo no Tenkai", OYO BUTSURI, vol. 66, no. 11, 1997, pages 1220 - 1224, XP008082324
See also references of EP 1981065A4
See also references of EP 1981065A4
Attorney, Agent or Firm:
RYUKA, Akihiro (22-1 Nishi-Shinjuku 6-chome, Shinjuku-k, Tokyo 05, JP)
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