PROCESSING LIQUID, SUBSTRATE PROCESSING METHOD, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

WIPO Patent Application WO/2023/248649

A1

The present invention addresses the problem of providing a processing liquid which has excellent etching selectivity of a silicon oxide-containing material with respect to an aluminum oxide-containing material, when processing a substrate including the silicon oxide-containing material and the aluminum oxide-containing material. The present invention addresses another problem of providing a substrate processing method using the processing liquid and a manufacturing method for a semiconductor device.　The processing liquid according to the present invention contains: a specific compound selected from the group consisting of hexafluorophosphoric acid and salts thereof; a specific organic acid selected from the group consisting of organic acids having a viscosity of 30 mPa·s or less at 25°C and salts thereof; and water. The contained amount of the specific organic acid is 60 mass% or more with respect to the total mass of the processing liquid, and the contained amount of the water is 1-30 mass% with respect to the total mass of the processing liquid.

JPH09246255	SURFACE TREATING LIQUID FOR SEMICONDUCTOR DEVICE AND WET PROCESSING OF SEMICONDUCTOR DEVICE
JP6086982	Etching constituent
JPH0442948	MANUFACTURE OF SEMICONDUCTOR DEVICE

MIZUTANI ATSUSHI (JP)
TAKAHASHI TOMONORI (JP)

PCT/JP2023/018310

December 28, 2023

May 16, 2023

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FUJIFILM CORP (JP)

H01L21/308; C11D7/16; C11D7/26; C11D7/34; C11D7/50; H01L21/304; H01L21/306

WO2021176903A1	2021-09-10
WO2014196468A1	2014-12-11

JP2021061391A	2021-04-15
JP2008227338A	2008-09-25
JP2020170841A	2020-10-15
JP2012099550A	2012-05-24

ITOH Hideaki et al. (JP)

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