PROCESSING METHOD BY USING FOCUSED ION BEAM AND FOCUSED ION BEAM PROCESSING APPARATUS

Title:

PROCESSING METHOD BY USING FOCUSED ION BEAM AND FOCUSED ION BEAM PROCESSING APPARATUS

Document Type and Number:

WIPO Patent Application WO/2006/115090

Kind Code:

A1

Abstract:

A processing method and a processing apparatus using a focused ion beam by which a region to be processed can be appropriately processed even the region is smaller than an irradiation width of the focused ion beam. In the processing method by using the focused ion beam (I), deposition process or etching process is performed to a body (90) to be processed by irradiating the body with the focused ion beam. As a dose quantity of the focused ion beam is increased by irradiating an edge (E) of the body to be processed with the focused ion beam and controlling the dose quantity, the processing region gradually increases from the edge, and the deposition process or the etching process is performed to the body (90) to be processed.

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Inventors:

KOZAKAI TOMOKAZU (JP)

Application Number:

PCT/JP2006/307987

Publication Date:

November 02, 2006

Filing Date:

April 17, 2006

Export Citation:

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Assignee:

SII NANOTECHNOLOGY INC (JP)
KOZAKAI TOMOKAZU (JP)

International Classes:

G03F1/72; H01J37/30; G03F1/74; H01J37/305; H01J37/317

Foreign References:

JP2002184342A	2002-06-28
JPS6074249A	1985-04-26

Attorney, Agent or Firm:

Matsushita, Yoshiharu (11-2 Hiroo 1-chome, Shibuya-ku Tokyo 12, JP)

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