PROCESSING METHOD USING LASER LIFT-OFF AND PLANARIZING JIG

WIPO Patent Application WO/2019/087855

A1

In this processing method using laser lift-off, a layered body 1 that includes a sapphire substrate 11 and micro-LEDs 12 formed on one surface of the sapphire substrate is irradiated with laser light via pulse oscillation from the other surface of the sapphire substrate, thereby causing the micro-LEDs to detach from the sapphire substrate. This processing method comprises: a step for planarizing the sapphire substrate by pressing any warpage of the sapphire substrate using an action external to the layered body; and a step for causing the micro-LEDs to detach from the sapphire substrate by moving the layered body placed on a stage 91 relative to an optical system 6 that emits laser light in a state where the sapphire substrate is planarized, while irradiating the sapphire substrate with the laser light from the other surface thereof such that the focal position of the laser light aligns with the boundary of the sapphire substrate and the micro-LEDs. The foregoing makes it possible to provide a processing method using laser lift-off that can cause micro-LEDs to be effectively detached from a sapphire substrate even if there is warping of the sapphire substrate.

YANAGAWA YOSHIKATSU (JP)
FUKAYA KOICHIRO (JP)
OKURA NAOYA (JP)

PCT/JP2018/039280

May 09, 2019

October 23, 2018

Click for automatic bibliography generation  

V TECH CO LTD (JP)

H01L33/02; H01L21/02

US20160336488A1	2016-11-17
US20150179876A1	2015-06-25
JP2016060675A	2016-04-25
JP2013021251A	2013-01-31

OGAWA, Moriaki et al. (JP)

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