Title:
PROCESSING METHOD
Document Type and Number:
WIPO Patent Application WO/2011/118532
Kind Code:
A1
Abstract:
Disclosed is a processing method which can achieve a high processing rate, and is capable of making a surface smooth. In order to achieve this an SiC substrate (8) is arranged in a potassium hydroxide solution (2) containing hydrogen peroxide, and ultraviolent radiation is irradiated on the surface of the SiC substrate (8). An SiO2 layer (9) is formed on the surface of the SiC substrate (8) due to the irradiation of ultraviolet radiation, and this SiO2 layer (9) is chemically removed by means of the potassium hydroxide solution, and also removed by a synthetic quartz surface plate (3a).
Inventors:
KUBOTA AKIHISA (JP)
TOUGE MUTSUMI (JP)
TOUGE MUTSUMI (JP)
Application Number:
PCT/JP2011/056597
Publication Date:
September 29, 2011
Filing Date:
March 18, 2011
Export Citation:
Assignee:
UNIV KUMAMOTO NAT UNIV CORP (JP)
KUBOTA AKIHISA (JP)
TOUGE MUTSUMI (JP)
KUBOTA AKIHISA (JP)
TOUGE MUTSUMI (JP)
International Classes:
H01L21/306; B24B1/00; B24B37/00; H01L21/304
Foreign References:
| JP2006024910A | 2006-01-26 | |||
| JP2002219635A | 2002-08-06 | |||
| JP2009117782A | 2009-05-28 |
Attorney, Agent or Firm:
ARIYOSHI Shuichiro (JP)
Shuichiro Ariyoshi (JP)
Shuichiro Ariyoshi (JP)
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