Title:
PRODUCTION APPARATUS AND METHOD FOR PRODUCING MG2SI1-XSNX POLYCRYSTALS
Document Type and Number:
WIPO Patent Application WO/2011/115297
Kind Code:
A1
Abstract:
Disclosed is a production apparatus and method for producing inexpensive Mg2Si1-xSnx polycrystals that can be used effectively for thermoelectric conversion materials that can be expected to have high performance indices by doping according to necessity. Specifically disclosed is a production apparatus (1) for Mg2Si1-xSnx characterized by comprising at least a reaction vessel (3) for synthesizing Mg2Si1-xSnx polycrystals (12) represented by formula (1) by filling the reaction vessel and reacting a mixture of Mg particles and Si particles or Mg particles and Sn particles or Mg-Si alloy particles or Mg-Sn alloy particles as a main starting material (2); an inorganic fiber layer (6) that is provided above the starting material (2) that fills the reaction vessel (3) and that has gas permeability and during the synthesis of the polycrystals (12) has a chemical reaction of Mg, which is gasified, and oxygen, and wherein the gas permeability of that inorganic fiber layer (6) can be extinguished by a product (7) that is generated; a heating means (8) that heats the reaction vessel (3); and a control means (9) for controlling the heating temperature and heating time for the reaction vessel (3). Mg2Si1-xSnx ... (1) [In formula (1), x is 0 - 1.]
Inventors:
UDONO HARUHIKO (JP)
MITO YOUHIKO (JP)
MITO YOUHIKO (JP)
Application Number:
PCT/JP2011/057064
Publication Date:
September 22, 2011
Filing Date:
March 16, 2011
Export Citation:
Assignee:
UNIV IBARAKI (JP)
SHOWA KDE CO LTD (JP)
UDONO HARUHIKO (JP)
MITO YOUHIKO (JP)
SHOWA KDE CO LTD (JP)
UDONO HARUHIKO (JP)
MITO YOUHIKO (JP)
International Classes:
C01B33/06; B22F1/12; C22C1/02; C22C13/00; C22C23/00; H01L35/14; H01L35/20; H01L35/34
Foreign References:
| JP2006128235A | 2006-05-18 | |||
| JP2006124728A | 2006-05-18 | |||
| JP2005133202A | 2005-05-26 |
Other References:
"Semiconducting Properties of Mg2Si Single Crystals", PHYSICAL REVIEW, vol. 109, no. 6, 15 March 1958 (1958-03-15), pages 1909 - 1915
SEEBECK: "Effect In Mg2Si Single Crystals J. Phys. Chem.", vol. 23, 1962, SOLIDS PERGAMON PRESS, pages: 601 - 610
"Bulk crystal growth of Mg2Si by the vertical Bridgman method", SCIENCE DIRECT THIN SOLID FILMS, vol. 461, 2004, pages 86 - 89
See also references of EP 2548845A4
SEEBECK: "Effect In Mg2Si Single Crystals J. Phys. Chem.", vol. 23, 1962, SOLIDS PERGAMON PRESS, pages: 601 - 610
"Bulk crystal growth of Mg2Si by the vertical Bridgman method", SCIENCE DIRECT THIN SOLID FILMS, vol. 461, 2004, pages 86 - 89
See also references of EP 2548845A4
Attorney, Agent or Firm:
AKIMOTO, TERUO (JP)
Teruo Akimoto (JP)
Teruo Akimoto (JP)
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Claims:
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