Title:
PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE AND PLASMA PROCESSING METHOD
Document Type and Number:
WIPO Patent Application WO/2024/034023
Kind Code:
A1
Abstract:
In relation to production steps for a device having a structure in which a gate is insulated and separated from a Si substrate in a three-dimensional structure of a GAA-type FET or the like having a laminated channel in which fine line-shaped or sheet-shaped channels are vertically laminated in the substrate, the present invention provides a method that does not complicate the production steps without changing a SiGe sacrificial layer for forming the laminated channel and the Ge compositional makeup in the SiGe sacrificial layer required for insulating and separating the gate and the substrate. In order to achieve the above, after etching of a laminated film formed of a Si channel 4B and a SiGe sacrificial layer 3B, a protective insulating film 9 is formed on a sidewall of the laminated film by film formation/etching, and this is performed a plurality of times with different protective film materials. Thereafter, a Si sacrificial layer 4A and a SiGe sacrificial layer 3A remaining in a lower portion are removed by isotropic etching to form a region in which the insulating separation membrane is embedded. By conducting, in a continuous process using the same device, the forming of the laminated film of the protective insulating film to the removing of the sacrificial layer by etching, it is possible to simplify the steps.
Inventors:
MIURA MAKOTO (JP)
SATO KIYOHIKO (JP)
KAWAMURA KOHEI (JP)
SAKAI SATOSHI (JP)
SATO KIYOHIKO (JP)
KAWAMURA KOHEI (JP)
SAKAI SATOSHI (JP)
Application Number:
PCT/JP2022/030488
Publication Date:
February 15, 2024
Filing Date:
August 09, 2022
Export Citation:
Assignee:
HITACHI HIGH TECH CORP (JP)
International Classes:
H01L29/78
Domestic Patent References:
| WO2021181613A1 | 2021-09-16 |
Foreign References:
| US20200279913A1 | 2020-09-03 | |||
| JP2022027614A | 2022-02-10 | |||
| JP2022027740A | 2022-02-14 | |||
| US20210242327A1 | 2021-08-05 | |||
| US20190109052A1 | 2019-04-11 |
Attorney, Agent or Firm:
POLAIRE I.P.C. (JP)
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