Title:
PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2005/083764
Kind Code:
A1
Abstract:
The oxide film (2) of a sensor element (11) is formed on a rectangular substrate (1), a diaphragm (3) is formed on the oxide film (2), fixing units (4) are formed on the diaphragm (3), a back electrode (5) is formed on the fixing units (4) so as to face the substrate (1), a gap area (6) is formed between the substrate (1) and the back electrode (5) by the fixing units (4), and a rectangular jetting (12) is formed to be positioned between the sensor element (11) and the sides so as to surround the back electrode (5) formed on the fixing units (4). The jetting (12) can prevent foreign matters (104) produced at dicing from intruding into the semiconductor element (11).
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Inventors:
KAGAWA KENICHI (JP)
YAKABE MASAMI (JP)
SAEKI SHINICHI (JP)
OHTSUJI TAKAHISA (JP)
YAKABE MASAMI (JP)
SAEKI SHINICHI (JP)
OHTSUJI TAKAHISA (JP)
Application Number:
PCT/JP2005/003301
Publication Date:
September 09, 2005
Filing Date:
February 28, 2005
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
HOSIDEN CORP (JP)
KAGAWA KENICHI (JP)
YAKABE MASAMI (JP)
SAEKI SHINICHI (JP)
OHTSUJI TAKAHISA (JP)
HOSIDEN CORP (JP)
KAGAWA KENICHI (JP)
YAKABE MASAMI (JP)
SAEKI SHINICHI (JP)
OHTSUJI TAKAHISA (JP)
International Classes:
H01L29/84; B81C1/00; G01D5/24; H01L21/301; H04R19/04; H04R31/00; (IPC1-7): H01L21/301; B81C1/00; G01D5/24; H01L29/84
Foreign References:
| JP2002016264A | 2002-01-18 |
Attorney, Agent or Firm:
Itoh, Hidehiko (Kyowa Shimanouchi Bldg. 21-19, Shimanouchi
1-chome, Chuo-ku, Osaka-sh, Osaka 82, JP)
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