Title:
PROGRAMMABLE STORAGE ARRAY, PROGRAMMING METHOD AND SEMICONDUCTOR MEMORY
Document Type and Number:
WIPO Patent Application WO/2024/055484
Kind Code:
A1
Abstract:
The embodiments of the present disclosure provide a programmable storage array, a programming method and a semiconductor memory. The programmable storage array comprises a plurality of storage units. Each storage unit comprises a first transistor and a second transistor, which are connected in series, wherein a first end of the first transistor is connected to a bit line, a gate end of the first transistor is connected to a programming line, and a second end of the first transistor is connected to a first end of the second transistor; and a gate end of the second transistor is connected to a word line, and a second end of the second transistor is connected to a first preset power supply. When the storage unit is programmed, the second transistor is controlled to be in a connected state, and the voltage difference between the gate end of the first transistor and the first end of the first transistor is controlled to be greater than 0; and when the storage unit is restored, the second transistor is controlled to be in a connected state, and the voltage difference between a gate of the first transistor and the first end of the first transistor is controlled to be smaller than 0.
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Inventors:
LI XIONG (CN)
Application Number:
PCT/CN2023/070139
Publication Date:
March 21, 2024
Filing Date:
January 03, 2023
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
G11C17/16
Foreign References:
| US20150043288A1 | 2015-02-12 | |||
| US20150348631A1 | 2015-12-03 | |||
| US20210391018A1 | 2021-12-16 | |||
| CN101807580A | 2010-08-18 |
Attorney, Agent or Firm:
CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)
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