Title:
PROGRAMMING METHOD FOR SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/148102
Kind Code:
A1
Abstract:
A programming method for a semiconductor device, and a semiconductor device. The semiconductor device comprises storage strings, wherein each storage string comprises a plurality of first storage units and a first dummy unit which are sequentially stacked, each of the first storage units is correspondingly connected to a word line, and a gate of the first dummy unit is connected to a first dummy word line. The method comprises: in a pre-charging phase, inputting a pre-charging voltage to a word line corresponding to a programmed storage unit in a plurality of first storage units, wherein the programmed storage unit is a storage unit between a storage unit to be programmed in the plurality of first storage units and a first dummy unit (501); and in a programming phase, inputting a programming voltage to a word line corresponding to the storage unit to be programmed (502).
Inventors:
LI KAIWEI (CN)
JIA JIANQUAN (CN)
MIN YUANYUAN (CN)
CUI YING (CN)
SONG YALI (CN)
LIU HONGTAO (CN)
JIA XINLEI (CN)
ZHANG AN (CN)
JIA JIANQUAN (CN)
MIN YUANYUAN (CN)
CUI YING (CN)
SONG YALI (CN)
LIU HONGTAO (CN)
JIA XINLEI (CN)
ZHANG AN (CN)
Application Number:
PCT/CN2021/126181
Publication Date:
July 14, 2022
Filing Date:
October 25, 2021
Export Citation:
Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
G11C16/34; G11C5/14; G11C8/14; G11C16/04
Foreign References:
| CN112614533A | 2021-04-06 | |||
| CN113889170A | 2022-01-04 | |||
| CN110945592A | 2020-03-31 | |||
| CN101627439A | 2010-01-13 | |||
| CN111149169A | 2020-05-12 | |||
| US20190252029A1 | 2019-08-15 |
Attorney, Agent or Firm:
CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)
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