Title:
PROTECTION CIRCUIT AND MEMORY
Document Type and Number:
WIPO Patent Application WO/2022/156156
Kind Code:
A1
Abstract:
The present application provides a protection circuit and a memory. The circuit is applied to a chip. The circuit comprises a first protection unit and a first protected element; the first protection unit receives a first input signal and a control signal, and outputs a first output signal; the first protected element comprises a first P-type transistor; the gate of the P-type transistor receives the first output signal; and when the chip enters aging test, the first output signal is a high-level signal. Therefore, the present application avoids the damage to the NBTI effect of the first P-type transistor when the chip enters the aging test, and improves the reliability of the chip.
Inventors:
LIU GEYAN (CN)
GU YINCHUAN (CN)
GU YINCHUAN (CN)
Application Number:
PCT/CN2021/105066
Publication Date:
July 28, 2022
Filing Date:
July 07, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
G11C29/08; G11C11/4078
Foreign References:
| CN112885387A | 2021-06-01 | |||
| CN101097243A | 2008-01-02 | |||
| CN110459153A | 2019-11-15 | |||
| CN106133536A | 2016-11-16 | |||
| US20190326893A1 | 2019-10-24 | |||
| US20100321065A1 | 2010-12-23 |
Attorney, Agent or Firm:
LEADER PATENT & TRADEMARK FIRM (CN)
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