QUANTUM DOT LIGHT-EMITTING DIODE SUBSTRATE WITH BONDING LAYER AND PREPARATION METHOD THEREFOR

Title:

QUANTUM DOT LIGHT-EMITTING DIODE SUBSTRATE WITH BONDING LAYER AND PREPARATION METHOD THEREFOR

Document Type and Number:

WIPO Patent Application WO/2017/117994

Kind Code:

A1

Abstract:

Provided are a quantum dot light-emitting diode substrate with a bonding layer and a preparation method therefor. The quantum dot light-emitting diode substrate comprises a plurality of sub-pixel light-emitting areas (115), wherein each of the sub-pixel light-emitting areas comprises a light-emitting layer (114); and the light-emitting layer comprises a bonding layer (106) and quantum dots (113) bonded with the bonding layer. The quantum dot light-emitting diode substrate can be prepared with a high resolution and a convenient process, and is suitable for large-scale production.

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Inventors:

LI YANZHAO (CN)
LEE CHUNG CHUN (CN)
CHEN ZHUO (CN)
ZHANG YUANMING (CN)

Application Number:

PCT/CN2016/092849

Publication Date:

July 13, 2017

Filing Date:

August 02, 2016

Export Citation:

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Assignee:

BOE TECHNOLOGY GROUP CO LTD (CN)

International Classes:

H01L51/50; H01L51/56

Foreign References:

CN105449111A	2016-03-30
CN103226260A	2013-07-31
CN101207075A	2008-06-25
CN1960024A	2007-05-09

Other References: