Title:
QUANTUM DOT LIGHT-EMITTING DIODE AND PREPARATION METHOD THEREFOR, AND DISPLAY PANEL
Document Type and Number:
WIPO Patent Application WO/2023/205922
Kind Code:
A1
Abstract:
The present disclosure provides a quantum dot light-emitting diode, comprising: a first electrode, a second electrode, and a quantum dot light-emitting layer disposed between the first electrode and the second electrode. One of the first electrode and the second electrode is a reflective electrode, and the other is a transmissive electrode or a transflective electrode; at least one light regulation and control layer is disposed between the first electrode and the second electrode, and the light regulation and control layer is configured to form a microcavity structure with the reflective electrode, so that the light extraction efficiency P of the quantum dot light-emitting diode satisfies: 25%≤P≤98%. Embodiments of the present disclosure further provide a preparation method for the quantum dot light-emitting diode and a display panel.
Inventors:
FENG JINGWEN (CN)
Application Number:
PCT/CN2022/088688
Publication Date:
November 02, 2023
Filing Date:
April 24, 2022
Export Citation:
Assignee:
BOE TECHNOLOGY GROUP CO LTD (CN)
BEIJING BOE TECHNOLOGY DEV CO LTD (CN)
BEIJING BOE TECHNOLOGY DEV CO LTD (CN)
International Classes:
H01L51/52; H01L51/50; H01L51/56
Foreign References:
| US20090230845A1 | 2009-09-17 | |||
| US20080272991A1 | 2008-11-06 | |||
| CN104335380A | 2015-02-04 | |||
| US20070075634A1 | 2007-04-05 |
Attorney, Agent or Firm:
TEE & HOWE INTELLECTUAL PROPERTY ATTORNEYS (CN)
Download PDF: