Title:
QUARTZ GLASS CRUCIBLE, MANUFACTURING METHOD THEREFOR, AND METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL
Document Type and Number:
WIPO Patent Application WO/2022/131047
Kind Code:
A1
Abstract:
[Problem] To provide: a quartz glass crucible which is for pulling a silicon single crystal, is hardly deformed at a high temperature during a crystal pulling step, and can endure long-term pulling; and a manufacturing method therefor. [Solution] This quartz glass crucible 1 has an inner transparent layer 11, an air bubble layer 13, an outer transparent layer 15, and a crystallization promoter-containing layer 16, from the inner surface side of the crucible toward the outer surface side. An outer transition layer 14, in which the content of air bubbles decreases from the air bubble layer 13 toward the outer transparent layer 15, is provided in a boundary portion between the air bubble layer 13 and the outer transparent layer 15, and the thickness of the outer transition layer 14 is 0.1-8 mm.
Inventors:
KITAHARA ERIKO (JP)
KISHI HIROSHI (JP)
FUJIWARA HIDEKI (JP)
KISHI HIROSHI (JP)
FUJIWARA HIDEKI (JP)
Application Number:
PCT/JP2021/044682
Publication Date:
June 23, 2022
Filing Date:
December 06, 2021
Export Citation:
Assignee:
SUMCO CORP (JP)
International Classes:
C30B29/06; C03B20/00; C30B15/10
Foreign References:
| JP2020105071A | 2020-07-09 | |||
| JP2015127287A | 2015-07-09 | |||
| JP2008507467A | 2008-03-13 | |||
| JP2004531449A | 2004-10-14 | |||
| JPH082932A | 1996-01-09 |
Attorney, Agent or Firm:
WASHIZU Mitsuhiro et al. (JP)
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