QUATERNARY SYSTEM TENSILE STRAIN SEMICONDUCTOR LASER EPITAXIAL WAFER AND PREPARATION METHOD THEREFOR

WIPO Patent Application WO/2021/212597

A1

Provided are a quaternary system tensile strain semiconductor laser epitaxial wafer and a preparation method therefor. The preparation method comprises the following steps: step 1: selecting an InP substrate (1); step 2: sequentially depositing, on the substrate (1), a cushion layer (2), a grating layer (3), and an InP cover layer (4); step 3: preparing a grating pattern on the grating layer (3) and the InP cover layer (4); and step 4: after completing preparing the grating pattern, continuing to grow, on the grating layer (3) and the InP cover layer (4), a coverage layer (5), an isolation layer (6), a lower limiting layer (7), a lower gradient waveguide layer (8), a multi-quantum well layer (9), an upper gradient waveguide layer (10), an upper limiting layer (11), an upper cladding layer (12), an upper gradient layer (13), and a contact layer (14) in sequence for completing preparation. The laser epitaxial wafer prepared by the preparation method increases the transport speed of a carrier, and the optical gain and the reliability of a semiconductor laser.

LUO SHUAI (CN)
JI HAIMING (CN)
XU PENGFEI (CN)
WANG YAN (CN)
ZHAO CHUNLONG (CN)
XU ZHIPENG (CN)

PCT/CN2020/092468

October 28, 2021

May 27, 2020

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JIANGSU HUAXING LASER TECH CO LTD (CN)

H01S5/026

CN110535030A	2019-12-03
CN103326242A	2013-09-25
CN110535032A	2019-12-03
CN102244368A	2011-11-16
US7514349B2	2009-04-07

WUHAN TODAY PATENT AGENCY (GENERAL PARTNERSHIP) (CN)

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