Title:
RADIATION-SENSITIVE COMPOSITION, AMORPHOUS FILM, AND RESIST PATTERN-FORMATION METHOD
Document Type and Number:
WIPO Patent Application WO/2016/158456
Kind Code:
A1
Abstract:
A radiation-sensitive composition containing a resist base material (A), a diazonaphthoquinone optically active compound (B), and a solvent (C). The solvent (C) content in the composition is 20%-99% by mass and the content of components other than the solvent (C) is 1%-80% by mass. The resist base material (A) is a compound indicated by a formula (1). (In the formula (1): R1 is a C1-30 2n-valent group; R2-R5 each independently indicate a C1-10 alkyl group, a C6-10 aryl group, a C2-10 alkyl group, a C1-30 alkoxy group, a halogen atom, a thiol group, or a hydroxyl group, however at least one R4 and/or at least one R5 is at least one type selected from a hydroxyl group and a thiol group; m2 and m3 each independently indicate an integer of 0-8; m4 and m5 each independently indicate an integer of 0-9, however m4 and m5 cannot both be 0 at the same time; n is an integer of 1-4; and p2-p5 each independently indicate an integer of 0-2.)
Inventors:
ECHIGO MASATOSHI (JP)
TOIDA TAKUMI (JP)
SATO TAKASHI (JP)
TOIDA TAKUMI (JP)
SATO TAKASHI (JP)
Application Number:
PCT/JP2016/058516
Publication Date:
October 06, 2016
Filing Date:
March 17, 2016
Export Citation:
Assignee:
MITSUBISHI GAS CHEMICAL CO (JP)
International Classes:
G03F7/022; C08F214/18; G03F7/004
Domestic Patent References:
| WO2005101127A1 | 2005-10-27 | |||
| WO2015137485A1 | 2015-09-17 | |||
| WO2015137486A1 | 2015-09-17 |
Foreign References:
| JP2010077038A | 2010-04-08 | |||
| JPH09106070A | 1997-04-22 | |||
| JPH08137100A | 1996-05-31 | |||
| JPH06242601A | 1994-09-02 | |||
| JP2009080203A | 2009-04-16 |
Other References:
See also references of EP 3279730A4
Attorney, Agent or Firm:
INABA, Yoshiyuki et al. (JP)
Yoshiyuki Inaba (JP)
Yoshiyuki Inaba (JP)
Download PDF: