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Title:
RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD
Document Type and Number:
WIPO Patent Application WO/2023/228845
Kind Code:
A1
Abstract:
Provided are: a radiation-sensitive resin composition, from which a resist film capable of exhibiting satisfactory levels of sensitivity, CDU performance, pattern circularity and LWR performance can be formed in the formation of a resist pattern having a high aspect ratio; and a pattern formation method. This radiation-sensitive resin composition comprises a first onium salt compound represented by formula (1), a second onium salt compound represented by formula (2), a resin containing a structural unit having an acid-dissociable group, and a solvent. (In formula (1), R1 represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 5 carbon atoms or a group having such a structure that in which a bivalent hetero-atom-containing group is contained between carbon atoms in a carbon-carbon bond in the aforementioned hydrocarbon group; R2 and R3 each independently represent a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group, or a monovalent fluorinated hydrocarbon group; one of Rf11 and Rf12 represents a fluorine atom and the other represents a hydrogen atom, a fluorine atom, or a monovalent fluorinated hydrocarbon group; m represents an integer of 0 to 8; and Z1 + represents a monovalent radiation-sensitive onium cation.) (In formula (2), R4 represents a monovalent organic group having 1 to 40 carbon atom in which either of a fluorine atom or a fluorinated hydrocarbon group is not bound to an atom adjacent to a sulfur atom; and Z2 + represents a monovalent organic cation.)

Inventors:
NEMOTO RYUICHI (JP)
MIYAKE MASAYUKI (JP)
INAMI HAJIME (JP)
FURUKAWA TSUYOSHI (JP)
OTSUKA NOBORU (JP)
MIYAO KENSUKE (JP)
Application Number:
PCT/JP2023/018526
Publication Date:
November 30, 2023
Filing Date:
May 18, 2023
Export Citation:
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Assignee:
JSR CORP (JP)
International Classes:
G03F7/004; G03F7/038; G03F7/039; G03F7/20
Domestic Patent References:
WO2013024756A12013-02-21
WO2022113663A12022-06-02
Foreign References:
JP2013520458A2013-06-06
JP2020083760A2020-06-04
JP2018076323A2018-05-17
Attorney, Agent or Firm:
UNIUS PATENT ATTORNEYS OFFICE (JP)
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